Forming semiconductor device by providing an amorphous silicon core with a hard mask layer
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Oct 22, 2019
Grant Date -
Oct 4, 2018
app pub date -
Mar 31, 2017
filing date -
Mar 31, 2017
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The invention relates to a method of forming a semiconductor device by patterning a substrate by providing an amorphous silicon layer on the substrate and forming a hard mask layer on the amorphous silicon layer. The amorphous silicon layer is provided with an anti-crystallization dopant to keep the layer amorphous at increased temperatures (relative to not providing the anti-crystallization dopant). The hard mask layer may comprise silicon and nitrogen.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully