Mask blank, phase shift mask and method for manufacturing semiconductor device

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United States of America Patent

PATENT NO 11119399
APP PUB NO 20180252995A1
SERIAL NO

15760265

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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According to the present invention, provided is a mask blank (10), in which: a light shielding film (4) has a single layer structure or a laminate structure of a plurality of layers; at least one layer of the light shielding film (4) is formed of a material which contains a transition metal and silicon and is free from nitrogen and oxygen, or a material which contains a transition metal, silicon, and nitrogen and satisfies a condition of the following expression (1); a phase shift film (2) has a surface layer and a layer other than the surface layer; and the layer other than the surface layer is formed of a material which contains a transition metal, silicon, nitrogen, and oxygen, has a content of oxygen of 3 atom % or more, and satisfies a condition of the following expression (A).

description='In-line Formulae' end='lead'CN≤9.0×10−6×RM4−1.65×10−4×RM3−7.718×10−2×RM2+3.611×RM−21.084   Expression (1)description='In-line Formulae' end='tail'

description='In-line Formulae' end='lead'0.04×AS−0.06×AM>1  Expression (A)description='In-line Formulae' end='tail'

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Patent Owner(s)

Patent OwnerAddress
HOYA CORPORATIONTOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Matsumoto, Atsushi Tokyo, JP 382 5029
Shishido, Hiroaki Tokyo, JP 102 766
Uchida, Takashi Tokyo, JP 130 1306

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