TiN hard mask and etch residue removal

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United States of America Patent

PATENT NO 10711227
APP PUB NO 20180251711A1
SERIAL NO

15865585

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Abstract

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Composition, method and system for PVD TiN hard mask removal from 28/20 nm pattern wafers have been disclosed. The composition uses peroxide as oxidizing agent for PVD TiN hard mask removal under slightly basic conditions. The composition comprises bulky or long chain organic amines or polyalkylamine to improve removal/etching selectivity of PVD TiN vs CVD TiN. The composition further comprises long chain organic acids or amines to maintain Co compatibility.

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Patent Owner(s)

Patent OwnerAddress
VERSUM MATERIALS US LLC8555 S RIVER PARKWAY TEMPE AS 85284

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Agarwal, Rajiv Krishan Malvern, US 6 30
Casteel,, Jr William Jack Fountain Hill, US 24 95
Chen, Tianniu Westford, US 68 1123
Lee, Yi-Chia Chupei, TW 50 205
Liu, Wen Dar Chupei, TW 41 209
Rao, Madhukar Bhaskara Carlsbad, US 34 529

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