Importance

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Abstract

A method of testing a semiconductor device includes: measuring minimum operating voltages of a plurality of semiconductor devices and operating frequencies of first and second ring oscillators included in the semiconductor devices, wherein the first ring oscillators have a first circuit configuration and the second ring oscillators have a second circuit configuration different from the first circuit configuration; generating a first model representing a correlation between operating frequencies of the first ring oscillators in the semiconductor devices and the minimum operating voltages of the semiconductor devices; generating a second model representing a correlation between operating frequencies of the second ring oscillators in the semiconductor devices and the minimum operating voltages of the semiconductor devices; measuring the operating frequencies of the first ring oscillators and the second ring oscillators included in a target semiconductor device; calculating a first measurement value using the operating frequencies of the first ring oscillators in the target semiconductor device and the first model; calculating a second measurement value using the operating frequencies of the second ring oscillators in the target semiconductor device and the second model; determining a high temperature compensation voltage of the target semiconductor device based on the first measurement value and the second measurement value; and modifying a dynamic voltage and frequency scaling (DVFS) table of the target semiconductor device according to the high temperature compensation voltage.

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First Claim