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Abstract

New compositions of matter and device constructs are disclosed in the form of diamond material layers or films having one or more surfaces treated with chemically active radicals, e.g., photo-radical or thermal-radical generators to reduce and stabilize their surface resistance. The compositions exhibit stable, markedly lower surface resistances, e.g., below about 3 kΩ sq⁻¹ or between about 3 and 2 kΩ sq⁻¹ or below 2 kΩ sq⁻¹, or below 1 kΩ sq⁻¹, or lower. In certain embodiments, the diamond material is a epitaxial layer grown on a substrate, e.g., by microwave plasma chemical vapor deposition (CVD) and can have a thickness ranging from about 1 nm to 1 mm, preferably from about 10 nm to 500 μm, or from about 100 nm to 10 μm. The invention also encompasses semiconductor devices fabricated from the surface-modified diamond materials disclosed herein. For example, device can be a field effect transistor in which the diamond material provides a hole conductivity channel between a source region and a drain region that is activated by a voltage applied to an intermediate gate region. Methods are also disclosed for modifying diamond surfaces to decrease and stabilize their surface resistance.

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First Claim