Photomask blank, and preparation method thereof
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United States of America Patent
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May 19, 2020
Grant Date -
Jun 28, 2018
app pub date -
Dec 20, 2017
filing date -
Dec 26, 2016
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Abstract
A photomask blank including a transparent substrate, and at least one film (A) containing chromium and free of silicon and at least one film (B) containing silicon, and oxygen or oxygen and nitrogen, and free of a transition metal that are contacted to each other In the blank, when an intension of secondary ions is measured along a thickness direction of the films by a time-of-flight secondary ion mass spectrometry (TOF-SIMS), an intension of secondary ions derived from Cr2O5 is lower than an intension of secondary ions derived from Cr, at a position located at the interface or its vicinity of the film (A) and film (B) and having a maximum intensity of secondary ions derived from SiCrO5.
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