Semiconductor substrate having amorphous and single crystalline III-V compound semiconductor layers
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United States of America Patent
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Apr 30, 2019
Grant Date -
Jun 14, 2018
app pub date -
Dec 7, 2017
filing date -
Dec 8, 2016
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Abstract
A semiconductor device, a semiconductor substrate and a method of forming the same are disclosed. The semiconductor substrate includes a first silicon-containing layer, a single crystalline III-V compound semiconductor layer and an amorphous III-V compound semiconductor layer. The first silicon-containing layer has a first region and a second region. The single crystalline III-V compound semiconductor layer is disposed on the first silicon-containing layer in the first region. The amorphous III-V compound semiconductor layer is disposed on the first silicon-containing layer in the second region.
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