Thin film material residual stress testing structure and method

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United States of America Patent

PATENT NO 10088375
APP PUB NO 20180164164A1
SERIAL NO

15104095

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Abstract

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A thin film material residual testing structure comprises two groups of structures. The first group of structures comprises an electrostatic driven polysilicon cantilever beam, an asymmetrical cross beam made of thin film material to be tested and having an alignment structure, and a double-end fixed support beam made of the thin film material to be tested. The second group of structures is similar to the structure of the first group with the fixed support beam removed. A residual stress testing method includes separating the loading drive part of force from a residual stress testing structure made of the thin film material to be tested, designing the bending deflection of a control testing structure according to geometrical parameters, extracting the force applied on the residual stress testing structure and utilizing force and deflection to calculate the residual stress of the thin film material to be tested.

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Patent Owner(s)

Patent OwnerAddress
SOUTHEAST UNIVERSITY211189 NO 2 SOUTHEAST UNIVERSITY ROAD JIANGNING DISTRICT NANJING JIANGSU NANJING CITY JIANGSU PROVINCE 211189

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Li, Weihua Nanjing, CN 57 540
Wang, Lei Nanjing, CN 2386 21419
Zhang, Lu Nanjing, CN 400 2978
Zhou, Zaifa Nanjing, CN 3 2

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