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• 15 United States
• 10 France
• 8 Japan
• 7 China
• 5 Korea
• 2 Other

Patent Owner(s)

Patent Owner	Address
JAPAN SCIENCE AND TECHNOLOGY AGENCY	4-1-8 HON-CHO SAITAMA KAWAGUCHI-SHI 332-0012

International Classification(s)

• C01B:NON-METALLIC ELEMENTS; COMPOUNDS THEREOF
• H01B:CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATER....
• B01J:CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS, CO....
• C01G:COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLAS....
• C30B:SINGLE-CRYSTAL GROWTH

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Bian, Zhenfeng	Osaka, JP	3	3
# of filed Patents : 3 Total Citations : 3
Majima, Tetsuro	Osaka, JP	4	10
# of filed Patents : 4 Total Citations : 10
Tachikawa, Takashi	Osaka, JP	23	187
# of filed Patents : 23 Total Citations : 187

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Full Text

US Patent Application No: 2018/0147,566

Metal Oxide Mesocrystal, and Method for Producing Same

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Abstract

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Various metal oxide mesocrystals can be synthesized in a simple manner by a method for producing a metal oxide mesocrystal, the method comprising the step of annealing an aqueous precursor solution comprising one or more metal oxide precursors, an ammonium salt, a surfactant, and water at 300 to 600° C. Composite mesocrystals consisting of a plurality of metal oxides or an alloy oxide can also be provided.

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Description

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