Mask free methods of depositing compositions to form heterostructures

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United States of America Patent

PATENT NO 10752794
APP PUB NO 20180142109A1
SERIAL NO

15816574

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Abstract

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The present disclosure provides methods of preparing heterostructures of two or more transition metal dichalcogenides on a surface in a pattern in which the method does not require a mask or blocking agent to create a pattern on the surface. Also provided herein are ink compositions which are used in the methods described herein and include precursor materials that generate these transition metal dichalcogenides.

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Patent Owner(s)

Patent OwnerAddress
SAINT LOUIS UNIVERSITY221 NORTH GRAND BOULEVARD ST LOUIS MO 63103

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dong, Rui St. Louis, US 17 139
Kuljanishvili, Irma St. Louis, US 3 2
Moore, Logan Festus, US 1 2

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