FDSOI-TYPE FIELD-EFFECT TRANSISTORS
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United States of America Patent
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Oct 2, 2017
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Oct 4, 2016
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Abstract
An electronic chip includes FDSOI-type field-effect transistors. The transistor each have a channel region that is doped at an average level in a range from 1016 to 5*1017 atoms/cm3 with a conductivity type opposite to that of a conductivity type for the dopant in the drain and source regions.
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