CMOS compatible rare-earth-doped waveguide amplifier
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United States of America Patent
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May 26, 2020
Grant Date -
Mar 22, 2018
app pub date -
Jun 21, 2017
filing date -
Sep 22, 2016
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Abstract
The present application is directed to a waveguide amplifier. The waveguide amplifier has a substrate including an upper surface and a lower surface. The waveguide amplifier also has a core made of silicon or silicon nitride formed on an upper surface of the substrate. The core includes a channel configured to transmit light there through. The waveguide amplifier also includes an upper cladding layer formed above the core. The upper cladding layer includes a glass doped with rare earth material. The application is also directed to a method of amplifying a signal.
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