Light-irradiation thermal treatment apparatus
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United States of America Patent
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app pub date -
Sep 13, 2017
filing date -
Sep 14, 2016
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
An atmosphere of ammonia that absorbs infrared light in a wavelength band overlapping with the measurement wavelength band of a radiation thermometer is formed in a chamber in which a semiconductor wafer is thermally treated. A filter that selectively transmits infrared light having a wavelength not overlapping with the absorption wavelength band of ammonia is installed between an optical lens system and a detector of the radiation thermometer to avoid influence of the infrared light absorption by ammonia. A conversion table corresponding to the installed filter is selected from a plurality of conversion tables representing a correlation between energy of infrared light incident on the radiation thermometer and temperature of a black body, and is used at the radiation thermometer. Accordingly, the temperature of the semiconductor wafer can be accurately measured in the atmosphere of ammonia.
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International Classification(s)
- 2017 Application Filing Year
- H01L Class
- 30754 Applications Filed
- 25260 Patents Issued To-Date
- 82.14 % Issued To-Date
Cited Art Landscape
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- 0 Citation Count
- H01L Class
- 0 % this patent is cited more than
- 5 Age
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