Fabrication method of vertical light-emitting diode
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United States of America Patent
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Oct 15, 2019
Grant Date -
Mar 15, 2018
app pub date -
Nov 11, 2017
filing date -
Dec 8, 2015
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Abstract
A fabrication method of a vertical light-emitting diode, such as an infrared light-emitting diode, includes heating the reaction chamber during growth of the reflective layer to pre-diffuse the metal molecules of the reflective layer into the epitaxial layer. As a result, the diffusion of the metal molecules in the reflective layer into the epitaxial layer during high-temperature fusion of the reflective layer and the epitaxial layer slows down, and the blackness level of conventional ohm contact holes is reduced.
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