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Abstract

A method is provided for operation a field effect transistor arrangement, the field effect transistor arrangement having a planar channel layer including a semiconductor material, a whole surface of an underside of the planar channel layer being applied to a top side of an electrically insulating substrate layer and an upper side of the planar channel layer being covered by an electrically insulating electrode insulation layer, the arrangement having a source electrode disposed by a first side edge of the planar channel layer and having a drain electrode disposed by a second side edge of the planar channel layer, and having a control electrode arranged above the planar channel layer between the source electrode and the drain electrode, wherein an adjusting electrode is arranged on an underside of the substrate layer, and a first contact region between the source electrode and the planar channel layer and a second contact region between the drain electrode and the planar channel layer are each a Schottky barrier, wherein a respective barrier control electrode is arranged between the first contact region of the source electrode and the control electrode and between the second contact region of the drain electrode and the control electrode, the method including providing a first electric potential to the control electrode, providing a second electric potential to the barrier electrodes, and providing a third electric potential to the adjusting electrode.

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