DISCHARGE ELECTRODE

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United States of America Patent

APP PUB NO 20180076008A1
SERIAL NO

15797180

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Heretofore, silicon nitride film formed by low pressure plasma CVD has been used for an antireflection film of a solar battery. But it is difficult to reduce the production cost of a solar battery, because, in a low pressure process, facility cost and process cost are expensive. As disclosed, a nitride film is formed by atmospheric pressure plasma CVD using dielectric barrier discharge generated by a plasma head where a plurality of plasma head unit parts is installed in parallel to generate plasma by applying electric field or magnetic field via a dielectric member. Stable glow discharge is formed even under atmospheric pressure by dielectric barrier discharge. And nitride film deposition under atmospheric pressure and low cost production of a solar battery is materialized by using dielectric barrier discharge and by reacting different plasmas generated from plasma supply openings laying side-by-side.

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Patent Owner(s)

Patent OwnerAddress
WACOM2-16 NIHONBASHI-MUROMACHI 4-CHOME CHUO-KU TOKYO 103-0022

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KUSUHARA, Masaki Tokyo, JP 38 313

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