GALLIUM NITRIDE-BASED SINTERED COMPACT AND METHOD FOR MANUFACTURING SAME

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United States of America Patent

SERIAL NO

15562112

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Abstract

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The object of the present invention is to provide a sputtering target for a gallium nitride thin film, which has a low oxygen content, a high density and a low resistivity.

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Patent Owner(s)

Patent OwnerAddress
TOSOH CORPORATIONSHUNAN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KURAMOCHI, Hideto Ayase-shi, JP 26 131
MESUDA, Masami Ayase-shi, JP 25 19

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