Nitride semiconductor light-emitting device, and method for manufacturing same
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United States of America Patent
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May 26, 2020
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Mar 8, 2018
app pub date -
Jun 30, 2015
filing date -
Apr 8, 2015
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Abstract
A nitride semiconductor light-emitting device comprises a substrate; a first conductivity type semiconductor layer formed on the substrate; a high-resistance semiconductor layer formed on the first conductivity type semiconductor layer; an active layer formed on the high-resistance semiconductor layer and having multiple quantum wells; and a second conductivity type semiconductor layer formed on the active layer. A first v-pit structure is formed between the high-resistance semiconductor layer and the first conductivity type semiconductor layer, and a second v-pit structure is formed between the active layer and the second conductivity type semiconductor layer. The second v-pit structure is formed such that a lowest part of the second conductivity type semiconductor layer contacts a lowest quantum well of the multiple quantum wells of the active layer through the second v-pit structure.
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