MANUFACTURE METHOD OF N TYPE THIN FILM TRANSISTOR
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United States of America Patent
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May 26, 2016
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Feb 14, 2016
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Abstract
The present invention provides a manufacture method of a N type thin film transistor. In the manufacture process, the chemical solution is employed to etch the channel region of the N type thin film transistor to raise a surface roughness of the low temperature polysilicon in the channel region of the N type thin film transistor, and thus to raise the surface defect density of the low temperature polysilicon in the channel region of the N type thin film transistor. Then, the threshold voltage of the manufactured N type thin film transistor moves toward the positive direction to ensure that the manufactured N type thin film transistor can be closed in time under the low voltage. The production efficiency is high and the production cost is low.
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