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Abstract

The present invention provides a TFT array substrate structure and a manufacturing method thereof, in which an interlayer dielectric layer (3) having a three-layer structure comprising a lower silicon nitride layer (31), a silicon oxide layer (32), and an upper silicon nitride layer (33) is used, wherein the lower silicon nitride layer (31) contains hydrogen for supplying hydrogen ions for hydrogenation operations and the upper silicon nitride layer (33) improves an isolation and protection capability of the interlayer dielectric layer (3) against impurity ions, so as to, when compared to the prior art that involves an intermediate dielectric layer having a dual-layer structure comprising only a silicon oxide layer and a silicon nitride layer, improve the isolation and protection capability of the interlayer dielectric layer against impurity ions, without affecting an effect of hydrogenation, and eliminating potential risk of contamination by impurity ions, shortening hydrogenation time, and increasing throughput.

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First Claim