DEPOSITION METHOD OF SILICON OXIDE THIN FILM AND MANUFACTURE METHOD OF LOW TEMPERATURE POLY-SILICON TFT SUBSTRATE
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May 19, 2016
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Jan 27, 2016
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The present invention provides a deposition method of a silicon oxide thin film and a manufacture method of a Low Temperature Poly-silicon TFT substrate. The present invention provides a deposition method of a silicon oxide thin film. The ultraviolet light is conducted to be the auxiliary energy of the reaction of the silicon oxide deposition. The ultra violet light is utilized to decompose the oxygen to be free oxygen, which reacts with the organic silane gas to generate silicon oxide, and thus to be deposited to form the silicon oxide thin film in the plasma free environment to prevent the surface of the silicon oxide thin film from the interface defect and surface damage formed by being impacted with the high energy plasma to raise the film formation quality of the silicon oxide thin film.
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