Cu—Ga alloy sputtering target and method of manufacturing Cu—Ga alloy sputtering target

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United States of America Patent

PATENT NO 10822691
APP PUB NO 20180066355A1
SERIAL NO

15560258

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Abstract

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A Cu—Ga alloy sputtering target of the present invention is made of a Cu—Ga alloy, in which a carbon concentration is 30 ppm by mass or lower. In an observed structure, an area ratio of crystal grains having a grain size of 10 μm or less is 5% to 50% and an area ratio of crystal grains having a grain size of 100 μm or more is 1% to 30%.

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Patent Owner(s)

Patent OwnerAddress
MITSUBISHI MATERIALS CORPORATIONTOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Mori, Satoru Naka, JP 35 265
Ueda, Toshiaki Tsukuba, JP 95 1317
Yoshida, Yuki Naka, JP 139 773

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