Piezoelectric thin film resonator, filter, and multiplexer
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United States of America Patent
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Dec 8, 2020
Grant Date -
Mar 1, 2018
app pub date -
Aug 2, 2017
filing date -
Aug 31, 2016
priority date (Note) -
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Abstract
A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode facing each other across at least a part of the piezoelectric film; and a wiring layer located on the upper electrode, the wiring layer having a thickness equal to or greater than 0.8 μm and equal to or less than 3.0 μm, at least a part of the wiring layer overlapping in plan view with a resonance region in which the lower electrode and the upper electrode face each other across the piezoelectric film, a distance between an outline of the resonance region and an edge of a lower surface located within the resonance region and farthest from the outline being greater than 0 μm and less than 2 μm.
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