Double pinned magnetoresistance element with temporary ferromagnetic layer to improve annealing

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United States of America Patent

PATENT NO 10026425
APP PUB NO 20180062072A1
SERIAL NO

15639281

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Abstract

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A double pinned magnetoresistance element has a temporary ferromagnetic layer, two PtMn antiferromagnetic pinning layers, and two associated synthetic antiferromagnetic (SAF) pinned layer structures, the temporary ferromagnetic layer operable to improve annealing of the two PtMn antiferromagnetic pinning layers and the two associated SAFs to two different magnetic directions that are a relative ninety degrees apart.

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Patent OwnerAddress
ALLEGRO MICROSYSTEMS LLC955 PERIMETER ROAD MANCHESTER NH 03103-3353

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Campiglio, Paolo Arcueil, FR 38 349

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