All-around gate field-effect transistor
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United States of America Patent
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Jul 17, 2018
Grant Date -
Mar 1, 2018
app pub date -
Mar 23, 2017
filing date -
Aug 30, 2016
priority date (Note) -
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Abstract
An all-around gate field-effect transistor includes two drain-source areas supported by a semiconductor substrate. At least one channel region, surrounded with a gate insulated by a gate insulator, extends between the two drain-source areas. The at least one channel region is located above an insulating layer resting on the substrate and positioned between the two drain-source areas. This insulating layer has a thickness-to-permittivity ratio at least 2 times greater than that of the gate insulator. An extension of the insulating layer is positioned to insulate at least one of the channel regions from the semiconductor substrate.
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