Crystalline oxide semiconductor film, crystalline oxide semiconductor device, and crystalline oxide semiconductor system

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United States of America Patent

PATENT NO 10804362
APP PUB NO 20180061952A1
SERIAL NO

15689547

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Abstract

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In a first aspect of a present inventive subject matter, a crystalline oxide semiconductor film includes a crystalline oxide semiconductor that contains a corundum structure as a major component, a dopant, and an electron mobility that is 30 cm2/Vs or more.

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Patent Owner(s)

Patent OwnerAddress
FLOSFIA INCKYOTO 615-8245

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hitora, Toshimi Kyoto, JP 52 257
Oda, Masaya Kyoto, JP 37 262
Tokuda, Rie Kyoto, JP 7 23

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