VERTICAL TRANSFER GATE TRANSISTOR AND ACTIVE CMOS IMAGE SENSOR PIXEL INCLUDING A VERTICAL TRANSFER GATE TRANSISTOR
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Aug 30, 2016
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Aug 30, 2016
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A transfer gate transistor includes a semiconductor substrate including a charge collection source region, a portion forming a channel region and a top region forming a drain region. A trench in the substrate surrounds the top region and the portion of the substrate. A vertical insulated gate structure for the transistor is formed in the trench. The vertical insulated gate structure includes an insulating liner on sidewalls and a bottom of said trench and an electrode including an upper conductive part and a lower conductive part. A width of the upper conductive part parallel to an upper surface of the substrate increases as depth from the upper surface of the substrate increases. A thickness of the insulating liner adjacent the upper conductive part decreases as depth from the upper surface of the substrate increases. A thickness of the insulating liner adjacent the lower conductive part is substantially constant.
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