Thin film transistor substrate, display panel, and laser annealing method
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United States of America Patent
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Jul 17, 2018
Grant Date -
Mar 1, 2018
app pub date -
Feb 15, 2016
filing date -
Mar 11, 2015
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Abstract
A thin film transistor substrate includes a plurality of thin film transistors arranged in columns and rows respectively on a substrate. Each of the thin film transistors includes a laser annealed part in which an amorphous silicon layer that forms a channel region is laser annealed to be a polysilicon layer, each laser annealed part is disposed with a designed pitch in a scanning direction in which a laser light for laser annealing and the substrate move relatively to each other, and the laser annealed part is provided within a channel width formed in a direction orthogonal to the scanning direction and being narrower than the channel width.
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