VAPOR-PHASE GROWTH METHOD
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
N/A
app pub date -
Aug 28, 2017
filing date -
Aug 29, 2016
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A substrate W is placed on a support part 7 provided in a reaction chamber 2. While the substrate W is rotated together with the support part 7 around a rotation shaft A passing through a center of the substrate W at a rotating speed of 1300 rpm or more and 2000 rpm or less, a source gas including an organic metal is supplied onto the substrate W from a portion above the reaction chamber 2 to cause a III-V semiconductor layer to grow on the substrate W.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully