Method of Depositing Aluminum Oxide Film, Method of Forming the Same, and Sputtering Apparatus

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United States of America Patent

SERIAL NO

15555316

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Abstract

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There are provided a method of depositing an aluminum oxide film, a method of forming the same, and a sputtering apparatus, which are capable of depositing an aluminum oxide film that can be crystallized at a low-temperature annealing process. In the method of depositing an aluminum oxide film according to this invention, a target made of aluminum oxide and a substrate W to be processed are disposed inside a vacuum chamber, a rare gas is introduced into the vacuum chamber, and HF power is applied to the target to thereby deposit by sputtering the aluminum oxide film on the surface of the substrate, the pressure in the vacuum chamber during film deposition is set to a range of 1.6 through 2.1 Pa.

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Patent Owner(s)

Patent OwnerAddress
ULVAC INCKANAGAWA JAPAN KANAGAWA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ikeda, Yoshihiro Kanagawa, JP 140 1597
Miyaguchi, Yuusuke Kanagawa, JP 7 2
Nakamura, Shinya Kanagawa, JP 166 1705
Suu, Koukou Kanagawa, JP 55 882

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