SEMICONDUCTOR LASER APPARATUS
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United States of America Patent
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Jun 24, 2016
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Jun 23, 2016
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According to the present invention, in a time wavelength division multiplexing-passive optical network (TWDM-PON) such as the next generation passive optical network 2 (NG-PON2) requiring a burst mode operation, in a process of manufacturing a semiconductor laser requiring selection of a very narrow wavelength, two laser waveguides having different oscillation wavelengths are formed in one laser diode chip, thereby making it possible to improve a wavelength yield of the chip. In addition, when any one laser waveguide participates in communication, a current applied to a waveguide laser that does not participate in the communication is modulated and applied to the waveguide laser, with respect to a wavelength change generated by a change in a current applied to a burst mode operation waveguide laser participating in the communication, to stabilize a wavelength of laser light oscillated from the laser waveguide participating in the communication, thereby enabling burst mode communication at a dense wavelength division multiplexing (DWDM) level.
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