MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Feb 22, 2018
app pub date -
Aug 16, 2016
filing date -
Aug 16, 2016
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Abstract
A memory device is provided. The memory device includes a substrate and a first stack structure. The first stack structure includes a tunneling layer. The tunneling layer includes SixOyNz, wherein x:y is 1:0.1 to 1:10, and x:z is 1:0.1 to 1:10. The first stack structure further includes a charge layer disposed over the tunneling layer and a first silicon oxide layer disposed over the charge layer. The first stack structure further includes a first gate line disposed over the first silicon oxide layer. The memory device further includes a source line doped region disposed in the substrate and disposed at the first side of the first stack structure. The memory device further includes a bit line doped region disposed in the substrate and disposed at the second side of the first stack structure. A method for manufacturing the memory device is also provided.
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