METHOD OF FORMING AMORPHOUS SILICON LAYER
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United States of America Patent
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Mar 30, 2017
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Aug 19, 2016
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Provided is a method of forming an amorphous silicon layer. The method includes depositing an amorphous silicon layer on a substrate in a chamber; performing a post-treatment on an upper surface portion of the amorphous silicon layer using plasma by activating a post-treatment gas containing at least one component of nitrogen and oxygen groups, in order to improve the etch rate and surface roughness of the amorphous silicon layer; providing a purge gas to the chamber; and evacuating the chamber using a pump.
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