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• 15 United States
• 10 France
• 8 Japan
• 7 China
• 5 Korea
• 2 Other

Patent Owner(s)

Patent Owner	Address
MITSUBISHI GAS CHEMICAL COMPANY INC	5-2 MARUNOUCHI 2-CHOME CHIYODA-KU TOKYO 100-8324

International Classification(s)

• H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....
• G03F:PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNE....

• [Classification Symbol]

• [Patents Count]

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
ECHIGO, Masatoshi	Tokyo, JP	137	625
HIGASHIHARA, Go	Okayama, JP	14	134
MAKINOSHIMA, Takashi	Kanagawa, JP	57	168
OKADA, Kana	Kanagawa, JP	10	20
OKOSHI, Atsushi	Okayama, JP	18	48

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Maintenance Fees

Fee	Large entity fee	small entity fee	micro entity fee	due date
7.5 Year Payment	$3600.00	$1800.00	$900.00	Aug 22, 2025
11.5 Year Payment	$7400.00	$3700.00	$1850.00	Aug 22, 2029

Fee	Large entity fee	small entity fee	micro entity fee
Surcharge - 7.5 year - Late payment within 6 months	$160.00	$80.00	$40.00
Surcharge - 11.5 year - Late payment within 6 months	$160.00	$80.00	$40.00
Surcharge after expiration - Late payment is unavoidable	$700.00	$350.00	$175.00
Surcharge after expiration - Late payment is unintentional	$1,640.00	$820.00	$410.00

Full Text

US Patent Application No: 2018/0052,392

MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, RESIST PATTERN FORMING METHOD, AND CIRCUIT PATTERN FORMING METHOD

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