Microwave Plasma Treatment Apparatus

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United States of America Patent

SERIAL NO

15553741

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Abstract

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[Problem] To provide a microwave plasma treatment apparatus that is not provided with complicated, long gas flow paths inside a dielectric substrate, to stabilize generation and retention of a plasma, and can generate a highly uniform, high-density, stable low-temperature plasma not only at low atmospheric pressures but also at middle atmospheric pressures and high atmospheric pressures.

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Patent Owner(s)

Patent OwnerAddress
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYTOKYO TOKYO METROPOLIS

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Jaeho Ibaraki, JP 330 6007
Sakakita, Hajime Ibaraki, JP 8 18

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