INTERCONNECT STRUCTURE WITH IMPROVED CONDUCTIVE PROPERTIES AND ASSOCIATED SYSTEMS AND METHODS

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United States of America Patent

SERIAL NO

15788094

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Abstract

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Interconnect structures with improved conductive properties are disclosed herein. In one embodiment, an interconnect structure can include a first conductive member coupled to a first semiconductor die and a second conductive member coupled to second semiconductor die. The first conductive member includes a recessed surface defining a depression. The second conductive member extends at least partially into the depression of the first conductive member. A bond material within the depression can at least partially encapsulate the second conductive member and thereby bond the second conductive member to the first conductive member.

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Patent Owner(s)

Patent OwnerAddress
MICRON TECHNOLOGY INC2805 EAST COLUMBIA ROAD BOISE ID 83706

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Derderian, James M Boise, US 66 1132
Gandhi, Jaspreet S San Jose, US 76 636
Huang, Wayne H Boise, US 17 85

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