PROJECTION EXPOSURE SYSTEM FOR MICROLITHOGRAPHY AND METHOD OF MONITORING A LATERAL IMAGING STABILITY
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United States of America Patent
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Jul 18, 2017
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Jun 26, 2008
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Abstract
A projection exposure system (10) for microlithography includes projection optics (12) configured to image mask structures into a substrate plane (16), an input diffraction element (28) configured to convert irradiated measurement radiation (21) into at least two test waves (30) directed onto the projection optics (12) with differing propagation directions, a detection diffraction element (34; 28) disposed in the optical path of the test waves (30) after they have passed through the projection optics (12) and configured to produce a detection beam (36) from the test waves (30) which has a mixture of radiation portions of both test waves (30), a photo detector (38) disposed in the optical path of the detection beam (36) configured to record the radiation intensity of the detection beam (36), time resolved, and an evaluation unit configured to determine the lateral imaging stability of the projection optics (12) from the radiation intensity recorded.
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