Method of evaluating semiconductor substrate and method of manufacturing semiconductor substrate

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United States of America Patent

PATENT NO 10641708
SERIAL NO

15557221

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Abstract

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Provided is a method of evaluating a semiconductor substrate, which evaluates quality of the semiconductor substrate by a photoluminescence measurement, wherein the evaluation by the photoluminescence measurement includes, after subjecting a surface of an evaluation-target semiconductor substrate to a pretreatment, irradiating the surface with excitation light, and then detecting emission obtained from the surface having been irradiated with the excitation light, and the pretreatment includes subjecting the surface of the evaluation-target semiconductor substrate to be irradiated with the excitation light to an oxide film formation treatment and charging the surface of the formed oxide film by corona discharge.

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Patent Owner(s)

Patent OwnerAddress
SUMCO CORPORATION2-1 SHIBAURA 1-CHOME MINATO-KU TOKYO 105-8634

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Eriguchi, Kazutaka Saga, JP 5 8
Kubota, Tsuyoshi Saga, JP 44 538

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