TEMPERATURE-CONTROLLED CHALCOGEN VAPOR DISTRIBUTION APPARATUS AND METHOD FOR UNIFORM CIGS DEPOSITION
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United States of America Patent
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Issued Date -
Feb 8, 2018
app pub date -
Aug 3, 2016
filing date -
Aug 3, 2016
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Abstract
A deposition system and method for depositing a uniform film of a chalcogen-containing compound semiconductor are provided. The deposition system includes a vacuum enclosure connected to a vacuum pump, a sputtering system comprising at least one sputtering target located in the vacuum enclosure, a chalcogen-containing gas source, and a gas distribution manifold having a supply side and a distribution side. The distribution side has a plurality of opening regions having independent temperature control and the supply side is connected to the chalcogen-containing gas source. A method of reactive sputter depositing a chalcogen-containing compound semiconductor material includes sputtering at least one metal component of the chalcogen-containing compound semiconductor material onto the substrate, and providing a higher chalcogen flux to ends of the substrate than to a middle of the substrate to form the chalcogen-containing compound semiconductor material.
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