SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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app pub date -
Sep 9, 2016
filing date -
Jul 29, 2016
priority date (Note) -
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status (Latency Note)
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Abstract
A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a bottom metal layer, a resistive random access memory (ReRAM) cell structure, and an upper metal layer. The bottom metal layer is located above the substrate. The ReRAM cell structure is formed on the bottom metal layer. The ReRAM cell structure includes a bottom electrode, a memory cell layer, a top electrode, and a spacer. The memory cell layer is formed on the bottom electrode. The top electrode is formed on the memory cell layer. The spacer is formed on two sides of the bottom electrode, the memory cell layer and the top electrode. The upper metal layer is electrically connected to and directly contacting the top electrode.
First Claim
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Family
| Country | kind | publication No. | Filing Date |
|---|---|---|---|
| CN | A | CN107665946 | Jul 29, 2016 |
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Cited Art Landscape
Patent Citation Ranking
- 1 Citation Count
- H01L Class
- 23.71 % this patent is cited more than
- 7 Age