Semiconductor device and semiconductor device manufacturing method
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United States of America Patent
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Mar 26, 2019
Grant Date -
Feb 1, 2018
app pub date -
Jul 10, 2017
filing date -
Jul 29, 2016
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Abstract
A semiconductor device includes a semiconductor substrate, a polysilicon layer fixed to the semiconductor substrate, and a silicon nitride layer in contact with the polysilicon layer, wherein the polysilicon layer includes a n-type layer and a p-type layer in contact with the n-type layer. The semiconductor device manufacturing method includes forming the polysilicon layer covering at least one hydrogen-containing layer, and heating the polysilicon layer and the hydrogen-containing layer.
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