NITRIDE SEMICONDUCTOR TEMPLATE AND METHOD FOR MANUFACTURING SAME

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United States of America Patent

SERIAL NO

15551960

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Abstract

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A nitride semiconductor template includes a Ga2O3 substrate, a buffer layer formed on the Ga2O3 substrate and including AlN as a principal component, a first nitride semiconductor layer formed on the buffer layer and including AlxGa1-xN (0.2yGa1-yN (0.2≦y≦0.55, y

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Patent Owner(s)

Patent OwnerAddress
RIKEN2-1 HIROSAWA WAKO-SHI SAITAMA 351-0198
TAMURA CORPORATION1-19-43 HIGASHI-OIZUMI NERIMA-KU TOKYO 178-8511

International Classification(s)

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  • 2016 Application Filing Year
  • H01L Class
  • 27971 Applications Filed
  • 23507 Patents Issued To-Date
  • 84.05 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances20162017201820192020202120222023202420250255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HIRAYAMA, Hideki Saitama, JP 90 670
IIZUKA, Kazuyuki Tokyo, JP 33 311
KURAMATA, Akito Tokyo, JP 22 350
MORISHIMA, Yoshikatsu Tokyo, JP 11 147

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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges3689997611243481558461392216162801 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +05001000150020002500300035004000450050005500600065007000750080008500900095001000010500

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