Integrated circuits having source/drain structure
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United States of America Patent
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Aug 4, 2020
Grant Date -
Feb 1, 2018
app pub date -
Oct 6, 2017
filing date -
Nov 18, 2010
priority date (Note) -
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Abstract
The integrated circuit includes a gate structure over a substrate. The integrated circuit further includes a first silicon-containing material structure in a recess adjacent to the gate structure. The first silicon-containing material structure includes a first layer having an uppermost surface below a top surface of the substrate and a bottommost surface in contact with the substrate. The first silicon-containing material structure further includes a second layer over the first layer, wherein an entirety of the second layer is co-planar with or above the top surface of the substrate. A first region of the second layer closer to the gate structure is thicker than a second region of the second layer farther from the gate structure. Thickness is measured in a direction perpendicular to the top surface of the substrate.
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