Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
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United States of America Patent
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Mar 19, 2019
Grant Date -
Feb 1, 2018
app pub date -
Jun 22, 2017
filing date -
Jul 29, 2016
priority date (Note) -
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Abstract
A silicon carbide semiconductor device, including a silicon carbide substrate, multiple trenches provided in the silicon carbide substrate, a first semiconductor region provided between each adjacent two of the trenches, a second semiconductor region selectively provided in the first semiconductor region, multiple third semiconductor regions selectively provided in the silicon carbide substrate to each cover a bottom of one trench, multiple fourth semiconductor regions selectively provided in the silicon carbide substrate, each between adjacent two of the trenches and being in contact with the first semiconductor region, multiple gate electrodes, each provided via a gate insulating film in one of the trenches, a first electrode connected to the first and second semiconductor regions, and a second electrode connected to the rear surface of the silicon carbide substrate. At least two of the trenches are arranged between each adjacent two of the fourth semiconductor regions.
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