Silicon germanium p-channel finFET stressor structure and method of making same
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United States of America Patent
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Oct 12, 2021
Grant Date -
Feb 1, 2018
app pub date -
Oct 12, 2017
filing date -
Nov 30, 2015
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Abstract
A source/drain (S/D) structure includes a SiGe structure epitaxially grown and having sloped facets on a recessed fin structure disposed adjacent to a channel portion of a finFET, a first Ge structure having a rounded surface epitaxially grown on the SiGe structure, and a capping layer formed over the rounded surface of the Ge structure. The capping layer may be formed of Si. Such S/D structures provide both a larger physical size for lower contact resistance, and greater volume and concentration of Ge for higher compressive strain applied to the channel portion of the finFET.
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