Semiconductor device and method for manufacturing the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jun 5, 2018
Issued Date -
N/A
app pub date -
May 10, 2017
filing date -
Jul 27, 2016
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method for manufacturing a semiconductor device includes sequentially stacking a first epitaxial layer, a sacrificial layer, a second epitaxial layer, and a third epitaxial layer on a first substrate, forming a trench which penetrates the third epitaxial layer, the second epitaxial layer, and the sacrificial layer, forming a structure layer on an upper surface of the third epitaxial layer, forming a metal film which covers an inner surface of the trench and the structure layer, forming a second substrate which fills the trench and covers the metal film, and separating the second epitaxial layer, the third epitaxial layer, and the structure layer from the first epitaxial layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully