Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
N/A
app pub date -
May 31, 2017
filing date -
Jul 29, 2016
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A silicon carbide (SiC) semiconductor device, including a SiC substrate, a first SiC layer formed on the substrate, first and second impurity layers selectively formed in the first SiC layer, a second SiC layer formed on the first SiC layer, a third impurity layer selectively formed in the second SiC layer and on the second impurity layer, a third SiC layer formed on the second SiC layer, a fourth impurity layer selectively formed in the third SiC layer, a trench that penetrates the fourth impurity layer and the second and third SiC layers, a bottom thereof reaching the first impurity layer, and a gate electrode formed in the trench via a gate insulating film. The first SiC layer has first and second regions adjacent respectively to the first and second impurity layers on a side facing the substrate, an impurity concentration at the first region being lower than that at the second region.
First Claim
Other Claims data not available
Family
International Classification(s)
- 2017 Application Filing Year
- H01L Class
- 30754 Applications Filed
- 25260 Patents Issued To-Date
- 82.14 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 3 Citation Count
- H01L Class
- 23.71 % this patent is cited more than
- 7 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Dec 19, 2025 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Dec 19, 2029 |
