Method of fabricating a semiconductor device
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United States of America Patent
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Jan 8, 2019
Grant Date -
Feb 1, 2018
app pub date -
Jul 26, 2017
filing date -
Jul 28, 2016
priority date (Note) -
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Abstract
A method of fabricating a semiconductor device is disclosed. A substrate is provided. A dummy gate stack is formed on the substrate. The dummy gate stack includes a gate dielectric layer and an amorphous silicon dummy gate on the gate dielectric layer. The amorphous silicon dummy gate is transformed into a nano-crystalline silicon dummy gate. A spacer is formed on a sidewall of the nano-crystalline silicon dummy gate. A source/drain region is formed in the substrate on either side of the dummy gate stack.
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