Preventing bridge formation between replacement gate and source/drain region through STI structure
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United States of America Patent
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Aug 28, 2018
Grant Date -
Feb 1, 2018
app pub date -
Jul 26, 2016
filing date -
Jul 26, 2016
priority date (Note) -
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Abstract
A method includes forming at least one fin above a semiconductor substrate. An isolation structure is formed adjacent the fin. A liner layer is formed above the isolation structure adjacent an interface between the fin and the isolation structure. The liner layer includes a material different than the isolation structure. A sacrificial gate structure is formed above a portion of the fin and includes a sacrificial gate insulation layer and a sacrificial gate structure. The sacrificial gate structure is removed. The sacrificial gate insulation layer is removed selectively to the liner layer. A replacement gate structure is formed above a portion of the fin in a cavity defined by removing the sacrificial gate structure.
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