Metal gate and contact plug design and method forming same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 6, 2018
Grant Date -
Feb 1, 2018
app pub date -
Feb 10, 2017
filing date -
Jul 29, 2016
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method includes forming a dummy gate stack over a semiconductor region, forming a gate spacer on a sidewall of the dummy gate stack, removing the dummy gate stack to form an opening, forming a replacement gate stack in the opening, recessing the replacement gate stack to form a recess, filling the recess with a conductive material, and performing a planarization to remove excess portions of the conductive material over the gate spacer. A remaining portion of the conductive material forms a gate contact plug. A top portion of the gate contact plug is at a same level as a top portion of the first gate spacer.
First Claim
Other Claims data not available
Family
International Classification(s)
- 2017 Application Filing Year
- H01L Class
- 30754 Applications Filed
- 25260 Patents Issued To-Date
- 82.14 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 4 Citation Count
- H01L Class
- 23.71 % this patent is cited more than
- 7 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | May 6, 2026 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | May 6, 2030 |
