Metal gate and contact plug design and method forming same
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United States of America Patent
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Nov 6, 2018
Grant Date -
Feb 1, 2018
app pub date -
Feb 10, 2017
filing date -
Jul 29, 2016
priority date (Note) -
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status (Latency Note)
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Abstract
A method includes forming a dummy gate stack over a semiconductor region, forming a gate spacer on a sidewall of the dummy gate stack, removing the dummy gate stack to form an opening, forming a replacement gate stack in the opening, recessing the replacement gate stack to form a recess, filling the recess with a conductive material, and performing a planarization to remove excess portions of the conductive material over the gate spacer. A remaining portion of the conductive material forms a gate contact plug. A top portion of the gate contact plug is at a same level as a top portion of the first gate spacer.
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